型号 SI7726DN-T1-GE3
厂商 Vishay Siliconix
描述 MOSFET N-CH 30V 35A 1212-8
SI7726DN-T1-GE3 PDF
代理商 SI7726DN-T1-GE3
产品目录绘图 DN-T1-E3 Series 1212-8
标准包装 3,000
FET 型 MOSFET N 通道,金属氧化物
FET 特点 标准
漏极至源极电压(Vdss) 30V
电流 - 连续漏极(Id) @ 25° C 35A
开态Rds(最大)@ Id, Vgs @ 25° C 9.5 毫欧 @ 10A,10V
Id 时的 Vgs(th)(最大) 2.6V @ 250µA
闸电荷(Qg) @ Vgs 43nC @ 10V
输入电容 (Ciss) @ Vds 1765pF @ 15V
功率 - 最大 52W
安装类型 表面贴装
封装/外壳 PowerPAK? 1212-8
供应商设备封装 PowerPAK? 1212-8
包装 带卷 (TR)
其它名称 SI7726DN-T1-GE3TR
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